2N3055 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N3055 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 115 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 2.5 MHz
Ganancia de corriente contínua (hFE): 20
Encapsulados: TO3
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2N3055 datasheet
..2. Size:179K motorola
2n3055 mj2955.pdf 
Order this document MOTOROLA by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * Complementary Silicon Power PNP MJ2955* Transistors . . . designed for general purpose switching and amplifier applications. *Motorola Preferred Device DC Current Gain hFE = 20 70 @ IC = 4 Adc Collector Emitter Saturation Voltage 15 AMPERE VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc P
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2n3055.pdf
2N3055 SILICON NPN TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base
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2n3055 mj2955 2.pdf
2N3055 MJ2955 Complementary power transistors Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose Audio Amplifier 1 2 Description TO-3 The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. Figure 1. Internal schematic d
..5. Size:70K onsemi
2n3055 mj2955.pdf
2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general-purpose switching and amplifier applications. Features http //onsemi.com DC Current Gain - hFE = 20-70 @ IC = 4 Adc Collector-Emitter Saturation Voltage - 15 AMPERE VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc POWER TRANSISTORS Exc
..6. Size:16K utc
2n3055.pdf
UTC 2N3055 SILICON NPN TRANSISTOR SILICON NPN TRANSISTORS The UTC 2N3055 is a silicon NPN transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 ABSOLUTE MAXIMUM RATINGS ( Ta=25 C ,unless otherwise specified ) PARAMETERS SYMBOL VALUE UNITS Collector-Base Voltage VCBO 100 V Collector-Em
..7. Size:330K cdil
2n3055 mj2955.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3055 NPN SILICON PLANAR POWER TRANSISTORS MJ2955 PNP TO-3 Metal Can Package General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL UNITS VALUE Collector Base Voltage VCBO V 100 Collector Emitter Voltage VCEO V 60 Collector Emitter Voltage(RBE=100
..8. Size:237K jmnic
2n3055.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N3055 DESCRIPTION With TO-3 package Complement to type MJ2955 DC Current Gain -hFE = 20 70 @ IC = 4 Adc Collector Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc Excellent Safe Operating Area APPLICATIONS Designed for general purpose switching and amplifier applications.
..9. Size:156K aeroflex
2n3055.pdf
NPN Power Silicon Transistor 2N3055 Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/407 TO-3 (TO-204AA) Package Maximum Ratings Ratings Symbol Value Units Collector - Emitter Voltage VCEO 70 Vdc Collector - Base Voltage VCBO 100 Vdc Emitter - Base Voltage VEBO 7.0 Vdc Base Current IB 7.0 Adc Collector Current IC 15 Adc Total Power Dissipation @ TA = 25 C (
..10. Size:613K jsmsemi
2n3055.pdf
2N3055 Silicon NPN Power Transistor DESCRIPTION Excellent Safe Operating Area DC Current Gain-hFE=20-70@IC = 4A Collector-Emitter Saturation Voltage- VCE(sat)= 1.1 V(Max)@ IC = 4A Complement to Type 2N2955 APPLICATIONS Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collecto
..11. Size:184K cn sptech
2n3055.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2N3055 DESCRIPTION Excellent Safe Operating Area DC Current Gain-h =20-70@I = 4A FE C Collector-Emitter Saturation Voltage- V )= 1.1 V(Max)@ I = 4A CE(sat C Complement to Type MJ2955 APPLICATIONS Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL
..12. Size:212K inchange semiconductor
2n3055.pdf
isc Silicon NPN Power Transistor 2N3055 DESCRIPTION Excellent Safe Operating Area DC Current Gain-h =20-70@I = 4A FE C Collector-Emitter Saturation Voltage- V )= 1.1 V(Max)@ I = 4A CE(sat C Complement to Type MJ2955 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching and amplifier appli
0.1. Size:235K motorola
2n3055a mj2955a mj15015 mj15016.pdf
Order this document MOTOROLA by 2N3055A/D SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon 2N3055A High-Power Transistors * MJ15015 . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc converters, inverters
0.2. Size:130K motorola
mj2955-2n3055.pdf
Order this document MOTOROLA by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * Complementary Silicon Power PNP MJ2955* Transistors . . . designed for general purpose switching and amplifier applications. *Motorola Preferred Device DC Current Gain hFE = 20 70 @ IC = 4 Adc Collector Emitter Saturation Voltage 15 AMPERE VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc P
0.3. Size:89K onsemi
2n3055a mj15015 mj15016.pdf
2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High-Power Transistors http //onsemi.com These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These 15 AMPERE devices can also be used in power switching circuits such as relay or solenoid drivers, dc-to-dc
0.4. Size:71K onsemi
2n3055g.pdf
2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general-purpose switching and amplifier applications. Features http //onsemi.com DC Current Gain - hFE = 20-70 @ IC = 4 Adc Collector-Emitter Saturation Voltage - 15 AMPERE VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc POWER TRANSISTORS Exc
0.5. Size:89K onsemi
2n3055ag.pdf
2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High-Power Transistors http //onsemi.com These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These 15 AMPERE devices can also be used in power switching circuits such as relay or solenoid drivers, dc-to-dc
0.6. Size:181K onsemi
2n3055ag mj15015g mj15016g.pdf
2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP) Complementary Silicon High-Power Transistors http //onsemi.com These PowerBase complementary transistors are designed for high power audio, stepping motor and other linear applications. These 15 AMPERE devices can also be used in power switching circuits such as relay or COMPLEMENTARY SILICON solenoid drivers, dc-to-dc converters, invert
0.8. Size:10K semelab
2n3055esmd.pdf
2N3055ESMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 60V IC = 15A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26
0.9. Size:240K cdil
2n3055hv.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3055HV NPN POWER TRANSISTOR TO-3 Metal Can Package Switching Regulator and Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage ( Open Emitter) V 100 VCEO Collector Emitter Voltage (Open Base) V 100 VEBO Emitter Base Voltage V
0.10. Size:1835K cn sps
2n3055t3bl.pdf
2N3055T3BL Silicon NPN Power Transistor DESCRIPTION Excellent Safe Operating Area DC Current Gain-h =20-70@I = 4A FE C Collector-Emitter Saturation Voltage- V )= 1.1 V(Max)@ I = 4A CE(sat C Complement to Type MJ2955 APPLICATIONS Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect
0.11. Size:33K inchange semiconductor
2n3055a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3055A DESCRIPTION Excellent Safe Operating Area DC Current Gain-hFE=20-70@IC = 4A Collector-Emitter Saturation Voltage- VCE(sat)= 1.1 V(Max)@ IC = 4A Complement to Type MJ2955A APPLICATIONS Designed for high power audio, stepping motor and other linear applications. It can also be
0.12. Size:31K inchange semiconductor
2n3055h.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3055H DESCRIPTION Excellent Safe Operating Area DC Current Gain-hFE=20-70@IC = 4A Collector-Emitter Saturation Voltage- VCE(sat)= 1.1 V(Max)@ IC = 4A APPLICATIONS Designed for general-purpose switching and amplifier Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER
0.13. Size:228K inchange semiconductor
2n3055b.pdf
isc Silicon NPN Power Transistor 2N3055B DESCRIPTION Excellent Safe Operating Area DC Current Gain-h =70-140 @I = 4A FE C Collector-Emitter Saturation Voltage- V )= 1.1 V(Max)@ I = 4A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM
Otros transistores... 2N3053, 2N3053A, 2N3053L, 2N3053S, 2N3053SM, 2N3054, 2N3054A, 2N3054S, BC639, 2N3055-1, 2N3055-10, 2N3055-2, 2N3055-3, 2N3055-4, 2N3055-5, 2N3055-6, 2N3055-7
