All Transistors. 2N3055 Datasheet

 

2N3055 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N3055

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 117 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 70 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 0.2 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO3

2N3055 Transistor Equivalent Substitute - Cross-Reference Search

 

2N3055 Datasheet (PDF)

0.1. 2n3055.pdf Size:422K _rca

2N3055

0.2. 2n3055a mj2955a mj15015 mj15016.pdf Size:235K _motorola

2N3055
2N3055

Order this documentMOTOROLAby 2N3055A/DSEMICONDUCTOR TECHNICAL DATANPNComplementary Silicon2N3055AHigh-Power Transistors*MJ15015. . . PowerBase complementary transistors designed

 0.3. 2n3055.pdf Size:130K _motorola

2N3055
2N3055

Order this documentMOTOROLAby 2N3055/DSEMICONDUCTOR TECHNICAL DATANPN2N3055 *Complementary Silicon Power PNPMJ2955*Transistors. . . designed for general purpose switching and amplif

0.4. 2n3055 mj2955.pdf Size:179K _motorola

2N3055
2N3055

Order this documentMOTOROLAby 2N3055/DSEMICONDUCTOR TECHNICAL DATANPN2N3055 *Complementary Silicon Power PNPMJ2955*Transistors. . . designed for general purpose switching and amplif

 0.5. mj2955-2n3055.pdf Size:130K _motorola

2N3055
2N3055

Order this documentMOTOROLAby 2N3055/DSEMICONDUCTOR TECHNICAL DATANPN2N3055 *Complementary Silicon Power PNPMJ2955*Transistors. . . designed for general purpose switching and amplif

0.6. 2n3055.pdf Size:39K _st

2N3055
2N3055

2N3055SILICON NPN TRANSISTORn SGS-THOMSON PREFERRED SALESTYPEDESCRIPTIONThe 2N3055 is a silicon epitaxial-base NPNtransistor in Jedec TO-3 metal case. It is intendedfor power switching circuits, series and shuntregulators, output stages and high fidelityamplifiers.12TO-3INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collector-Base

0.7. 2n3055 mj2955 2.pdf Size:90K _st

2N3055
2N3055

2N3055MJ2955Complementary power transistorsFeatures Low collector-emitter saturation voltage Complementary NPN - PNP transistorsApplications General purpose Audio Amplifier12DescriptionTO-3The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications.Figure 1. Internal schematic d

0.8. 2n3055ag.pdf Size:89K _onsemi

2N3055
2N3055

2N3055A (NPN),MJ15015 (NPN),MJ15016 (PNP)MJ15015 and MJ15016 are Preferred DevicesComplementary SiliconHigh-Power Transistorshttp://onsemi.comThese PowerBaset complementary transistors are designed forhigh power audio, stepping motor and other linear applications. These15 AMPEREdevices can also be used in power switching circuits such as relay orsolenoid drivers, dc-to-dc

0.9. 2n3055a mj15015 mj15016.pdf Size:89K _onsemi

2N3055
2N3055

2N3055A (NPN),MJ15015 (NPN),MJ15016 (PNP)MJ15015 and MJ15016 are Preferred DevicesComplementary SiliconHigh-Power Transistorshttp://onsemi.comThese PowerBaset complementary transistors are designed forhigh power audio, stepping motor and other linear applications. These15 AMPEREdevices can also be used in power switching circuits such as relay orsolenoid drivers, dc-to-dc

0.10. 2n3055g.pdf Size:71K _onsemi

2N3055
2N3055

2N3055(NPN), MJ2955(PNP)Preferred Device Complementary SiliconPower TransistorsComplementary silicon power transistors are designed forgeneral-purpose switching and amplifier applications.Featureshttp://onsemi.com DC Current Gain - hFE = 20-70 @ IC = 4 Adc Collector-Emitter Saturation Voltage -15 AMPEREVCE(sat) = 1.1 Vdc (Max) @ IC = 4 AdcPOWER TRANSISTORS Exc

0.11. 2n3055 mj2955.pdf Size:70K _onsemi

2N3055
2N3055

2N3055(NPN), MJ2955(PNP)Preferred Device Complementary SiliconPower TransistorsComplementary silicon power transistors are designed forgeneral-purpose switching and amplifier applications.Featureshttp://onsemi.com DC Current Gain - hFE = 20-70 @ IC = 4 Adc Collector-Emitter Saturation Voltage -15 AMPEREVCE(sat) = 1.1 Vdc (Max) @ IC = 4 AdcPOWER TRANSISTORS Exc

0.12. 2n3055.pdf Size:16K _utc

2N3055
2N3055

UTC 2N3055 SILICON NPN TRANSISTORSILICON NPN TRANSISTORS The UTC 2N3055 is a silicon NPN transistor in TO-3metal case. It is intended for power switching circuits,series and shunt regulators, output stages and high fidelityamplifiers.TO-3ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified )PARAMETERS SYMBOL VALUE UNITSCollector-Base Voltage VCBO 100 VCollector-Em

0.13. mj15015-16 2n3055a mj2955a.pdf Size:193K _mospec

2N3055
2N3055

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0.14. 2n3055esmd.pdf Size:10K _semelab

2N3055

2N3055ESMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 60V IC = 15A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26

0.15. 2n3055hv.pdf Size:240K _cdil

2N3055
2N3055

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company2N3055HVNPN POWER TRANSISTORTO-3Metal Can PackageSwitching Regulator and Power Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITSVCBOCollector Base Voltage ( Open Emitter) V100VCEOCollector Emitter Voltage (Open Base) V100VEBOEmitter Base Voltage V

0.16. 2n3055 mj2955.pdf Size:330K _cdil

2N3055
2N3055

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company2N3055 NPNSILICON PLANAR POWER TRANSISTORSMJ2955 PNPTO-3Metal Can PackageGeneral Purpose Switching and Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL UNITSVALUECollector Base Voltage VCBO V100Collector Emitter Voltage VCEO V60Collector Emitter Voltage(RBE=100

0.17. 2n3055.pdf Size:237K _jmnic

2N3055
2N3055

Product Specification www.jmnic.comSilicon NPN Power Transistors 2N3055 DESCRIPTION With TO-3 package Complement to type MJ2955 DC Current Gain -hFE = 2070 @ IC = 4 Adc CollectorEmitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc Excellent Safe Operating Area APPLICATIONS Designed for generalpurpose switching and amplifier applications.

0.18. 2n3055.pdf Size:156K _aeroflex

2N3055
2N3055

NPN Power Silicon Transistor2N3055Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/407 TO-3 (TO-204AA) PackageMaximum RatingsRatings Symbol Value UnitsCollector - Emitter Voltage VCEO 70 VdcCollector - Base Voltage VCBO 100 VdcEmitter - Base Voltage VEBO 7.0 VdcBase Current IB 7.0 AdcCollector Current IC 15 AdcTotal Power Dissipation @ TA = 25 C (

0.19. 2n3055b.pdf Size:228K _inchange_semiconductor

2N3055
2N3055

isc Silicon NPN Power Transistor 2N3055BDESCRIPTIONExcellent Safe Operating AreaDC Current Gain-h =70-140 @I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 1.1 V(Max)@ I = 4ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching and amplifierapplicationsABSOLUTE MAXIMUM

0.20. 2n3055.pdf Size:213K _inchange_semiconductor

2N3055
2N3055

isc Silicon NPN Power Transistor 2N3055DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-h =20-70@I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 1.1 V(Max)@ I = 4ACE(sat CComplement to Type MJ2955Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching and amplifierappli

0.21. 2n3055a.pdf Size:33K _inchange_semiconductor

2N3055
2N3055

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3055A DESCRIPTION Excellent Safe Operating Area DC Current Gain-hFE=20-70@IC = 4A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A Complement to Type MJ2955A APPLICATIONS Designed for high power audio, stepping motor and other linear applications. It can also be

0.22. 2n3055h.pdf Size:31K _inchange_semiconductor

2N3055
2N3055

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3055H DESCRIPTION Excellent Safe Operating Area DC Current Gain-hFE=20-70@IC = 4A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A APPLICATIONS Designed for general-purpose switching and amplifier Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER

Datasheet: 2N3053 , 2N3053A , 2N3053L , 2N3053S , 2N3053SM , 2N3054 , 2N3054A , 2N3054S , C103 , 2N3055-1 , 2N3055-10 , 2N3055-2 , 2N3055-3 , 2N3055-4 , 2N3055-5 , 2N3055-6 , 2N3055-7 .

 

 
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