All Transistors. BU323P Datasheet

 

BU323P Datasheet, Equivalent, Cross Reference Search


   Type Designator: BU323P
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 125 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 50 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 4 MHz
   Collector Capacitance (Cc): 350 pF
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO3

 BU323P Transistor Equivalent Substitute - Cross-Reference Search

   

BU323P Datasheet (PDF)

 ..1. Size:224K  inchange semiconductor
bu323p.pdf

BU323P BU323P

isc Silicon NPN Darlington Power Transistor BU323PDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min.)CEO(SUS)High ReliabilityLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS(T =25

 9.1. Size:239K  motorola
bu323are.pdf

BU323P BU323P

Order this documentMOTOROLAby BU323A/DSEMICONDUCTOR TECHNICAL DATABU323ANPN Silicon Power Darlington16 AMPERE PEAKTransistorPOWER TRANSISTORDARLINGTON NPNThe BU323A is a monolithi

 9.2. Size:218K  motorola
bu323apr.pdf

BU323P BU323P

Order this documentMOTOROLAby BU323AP/DSEMICONDUCTOR TECHNICAL DATABU323APNPN Silicon Darlington PowerDARLINGTONTransistorNPN SILICONPOWER TRANSISTORThe BU323AP is a monolithic da

 9.3. Size:218K  motorola
bu323zre.pdf

BU323P BU323P

Order this documentMOTOROLAby BU323Z/DSEMICONDUCTOR TECHNICAL DATABU323ZAdvance InformationAUTOPROTECTEDNPN Silicon Power DarlingtonDARLINGTON10 AMPERESHigh Voltage Autoprotected

 9.4. Size:200K  motorola
bu323zrev8.pdf

BU323P BU323P

Order this documentMOTOROLAby BU323Z/DSEMICONDUCTOR TECHNICAL DATABU323ZAdvance InformationAUTOPROTECTEDNPN Silicon Power DarlingtonDARLINGTON10 AMPERESHigh Voltage Autoprotected

 9.5. Size:215K  inchange semiconductor
bu323z.pdf

BU323P BU323P

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BU323ZDESCRIPTIONWith TO-220 packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlElectronic ignitionAlternator regu

 9.6. Size:209K  inchange semiconductor
bu323.pdf

BU323P BU323P

isc Silicon Darlington NPN Power Transistor BU323DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min.)CEO(SUS)High ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNIT

 9.7. Size:209K  inchange semiconductor
bu323a.pdf

BU323P BU323P

isc Silicon NPN Power Transistor BU323ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)DARLINGTONHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE

 9.8. Size:219K  inchange semiconductor
bu323ap.pdf

BU323P BU323P

isc Silicon Darlington NPN Power Transistor BU323APDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)High ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UN

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2SC945 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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