Справочник транзисторов. BU323P

 

Биполярный транзистор BU323P - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BU323P
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 125 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 300 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 200 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
   Макcимальный постоянный ток коллектора (Ic): 50 A
   Предельная температура PN-перехода (Tj): 200 °C
   Граничная частота коэффициента передачи тока (ft): 4 MHz
   Ёмкость коллекторного перехода (Cc): 350 pf
   Статический коэффициент передачи тока (hfe): 1000
   Корпус транзистора: TO3

 Аналоги (замена) для BU323P

 

 

BU323P Datasheet (PDF)

 ..1. Size:224K  inchange semiconductor
bu323p.pdf

BU323P
BU323P

isc Silicon NPN Darlington Power Transistor BU323PDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min.)CEO(SUS)High ReliabilityLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS(T =25

 9.1. Size:239K  motorola
bu323are.pdf

BU323P
BU323P

Order this documentMOTOROLAby BU323A/DSEMICONDUCTOR TECHNICAL DATABU323ANPN Silicon Power Darlington16 AMPERE PEAKTransistorPOWER TRANSISTORDARLINGTON NPNThe BU323A is a monolithic darlington transistor designed for automotive ignition,SILICONswitching regulator and motor control applications.400 VOLTSCOLLECTOR VCE Sat Specified at 40_C = 2.0 V Max. at IC = 6

 9.2. Size:218K  motorola
bu323apr.pdf

BU323P
BU323P

Order this documentMOTOROLAby BU323AP/DSEMICONDUCTOR TECHNICAL DATABU323APNPN Silicon Darlington PowerDARLINGTONTransistorNPN SILICONPOWER TRANSISTORThe BU323AP is a monolithic darlington transistor designed for automotive ignition,400 VOLTSswitching regulator and motor control applications.125 WATTS CollectorEmitter Sustaining Voltage COLLECTORVCER(sus)

 9.3. Size:218K  motorola
bu323zre.pdf

BU323P
BU323P

Order this documentMOTOROLAby BU323Z/DSEMICONDUCTOR TECHNICAL DATABU323ZAdvance InformationAUTOPROTECTEDNPN Silicon Power DarlingtonDARLINGTON10 AMPERESHigh Voltage Autoprotected360450 VOLTS CLAMP150 WATTSThe BU323Z is a planar, monolithic, highvoltage power Darlington with a builtinactive zener clamping circuit. This device is specifically designed for uncl

 9.4. Size:200K  motorola
bu323zrev8.pdf

BU323P
BU323P

Order this documentMOTOROLAby BU323Z/DSEMICONDUCTOR TECHNICAL DATABU323ZAdvance InformationAUTOPROTECTEDNPN Silicon Power DarlingtonDARLINGTON10 AMPERESHigh Voltage Autoprotected360450 VOLTS CLAMP150 WATTSThe BU323Z is a planar, monolithic, highvoltage power Darlington with a builtinactive zener clamping circuit. This device is specifically designed for uncl

 9.5. Size:215K  inchange semiconductor
bu323z.pdf

BU323P
BU323P

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BU323ZDESCRIPTIONWith TO-220 packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlElectronic ignitionAlternator regu

 9.6. Size:209K  inchange semiconductor
bu323.pdf

BU323P
BU323P

isc Silicon Darlington NPN Power Transistor BU323DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min.)CEO(SUS)High ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNIT

 9.7. Size:209K  inchange semiconductor
bu323a.pdf

BU323P
BU323P

isc Silicon NPN Power Transistor BU323ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)DARLINGTONHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE

 9.8. Size:219K  inchange semiconductor
bu323ap.pdf

BU323P
BU323P

isc Silicon Darlington NPN Power Transistor BU323APDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)High ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UN

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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