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BU323P . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BU323P
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 125 W
   Tensión colector-base (Vcb): 300 V
   Tensión colector-emisor (Vce): 200 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 50 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 4 MHz
   Capacitancia de salida (Cc): 350 pF
   Ganancia de corriente contínua (hfe): 1000
   Paquete / Cubierta: TO3

 Búsqueda de reemplazo de transistor bipolar BU323P

 

BU323P Datasheet (PDF)

 ..1. Size:224K  inchange semiconductor
bu323p.pdf

BU323P
BU323P

isc Silicon NPN Darlington Power Transistor BU323PDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min.)CEO(SUS)High ReliabilityLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS(T =25

 9.1. Size:239K  motorola
bu323are.pdf

BU323P
BU323P

Order this documentMOTOROLAby BU323A/DSEMICONDUCTOR TECHNICAL DATABU323ANPN Silicon Power Darlington16 AMPERE PEAKTransistorPOWER TRANSISTORDARLINGTON NPNThe BU323A is a monolithic darlington transistor designed for automotive ignition,SILICONswitching regulator and motor control applications.400 VOLTSCOLLECTOR VCE Sat Specified at 40_C = 2.0 V Max. at IC = 6

 9.2. Size:218K  motorola
bu323apr.pdf

BU323P
BU323P

Order this documentMOTOROLAby BU323AP/DSEMICONDUCTOR TECHNICAL DATABU323APNPN Silicon Darlington PowerDARLINGTONTransistorNPN SILICONPOWER TRANSISTORThe BU323AP is a monolithic darlington transistor designed for automotive ignition,400 VOLTSswitching regulator and motor control applications.125 WATTS CollectorEmitter Sustaining Voltage COLLECTORVCER(sus)

 9.3. Size:218K  motorola
bu323zre.pdf

BU323P
BU323P

Order this documentMOTOROLAby BU323Z/DSEMICONDUCTOR TECHNICAL DATABU323ZAdvance InformationAUTOPROTECTEDNPN Silicon Power DarlingtonDARLINGTON10 AMPERESHigh Voltage Autoprotected360450 VOLTS CLAMP150 WATTSThe BU323Z is a planar, monolithic, highvoltage power Darlington with a builtinactive zener clamping circuit. This device is specifically designed for uncl

 9.4. Size:200K  motorola
bu323zrev8.pdf

BU323P
BU323P

Order this documentMOTOROLAby BU323Z/DSEMICONDUCTOR TECHNICAL DATABU323ZAdvance InformationAUTOPROTECTEDNPN Silicon Power DarlingtonDARLINGTON10 AMPERESHigh Voltage Autoprotected360450 VOLTS CLAMP150 WATTSThe BU323Z is a planar, monolithic, highvoltage power Darlington with a builtinactive zener clamping circuit. This device is specifically designed for uncl

 9.5. Size:215K  inchange semiconductor
bu323z.pdf

BU323P
BU323P

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BU323ZDESCRIPTIONWith TO-220 packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlElectronic ignitionAlternator regu

 9.6. Size:209K  inchange semiconductor
bu323.pdf

BU323P
BU323P

isc Silicon Darlington NPN Power Transistor BU323DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min.)CEO(SUS)High ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNIT

 9.7. Size:209K  inchange semiconductor
bu323a.pdf

BU323P
BU323P

isc Silicon NPN Power Transistor BU323ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)DARLINGTONHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE

 9.8. Size:219K  inchange semiconductor
bu323ap.pdf

BU323P
BU323P

isc Silicon Darlington NPN Power Transistor BU323APDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)High ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UN

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