All Transistors. BUV20 Datasheet

 

BUV20 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BUV20
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 250 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 125 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 50 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3

 BUV20 Transistor Equivalent Substitute - Cross-Reference Search

   

BUV20 Datasheet (PDF)

 ..1. Size:43K  st
buv20.pdf

BUV20
BUV20

BUV20HIGH CURRENT NPN SILICON TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH RUGGEDNESS APPLICATIONS 1 LINEAR AND SWITCHING INDUSTRIAL2EQUIPMENT SWITCHING REGULATORS TO-3DESCRIPTION (version "S")The BUV20 is silicon Multiepitaxial Planar NPNtransistor mounted in jedec TO-3 metal case.

 ..2. Size:207K  inchange semiconductor
buv20.pdf

BUV20
BUV20

isc Silicon NPN Power Transistor BUV20DESCRIPTIONLow Collector Saturation Voltage-: V = 0.6V(Max.) @I = 25ACE(sat) CHigh DC Current Gain-: h = 20(Min.)@ I = 25AFE CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed, high current, high powerapplications.Absolute maximum rat

 0.1. Size:142K  motorola
buv20rev.pdf

BUV20
BUV20

Order this documentMOTOROLAby BUV20/DSEMICONDUCTOR TECHNICAL DATABUV20SWITCHMODE Series50 AMPERESNPN Silicon Power TransistorNPN SILICONPOWER. . . designed for high speed, high cu

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2SC945 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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