BUV20 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUV20
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 125 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 50 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
BUV20 Transistor Equivalent Substitute - Cross-Reference Search
BUV20 Datasheet (PDF)
buv20.pdf
BUV20HIGH CURRENT NPN SILICON TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH RUGGEDNESS APPLICATIONS 1 LINEAR AND SWITCHING INDUSTRIAL2EQUIPMENT SWITCHING REGULATORS TO-3DESCRIPTION (version "S")The BUV20 is silicon Multiepitaxial Planar NPNtransistor mounted in jedec TO-3 metal case.
buv20.pdf
isc Silicon NPN Power Transistor BUV20DESCRIPTIONLow Collector Saturation Voltage-: V = 0.6V(Max.) @I = 25ACE(sat) CHigh DC Current Gain-: h = 20(Min.)@ I = 25AFE CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed, high current, high powerapplications.Absolute maximum rat
buv20rev.pdf
Order this documentMOTOROLAby BUV20/DSEMICONDUCTOR TECHNICAL DATABUV20SWITCHMODE Series50 AMPERESNPN Silicon Power TransistorNPN SILICONPOWER. . . designed for high speed, high current, high power applications.METAL TRANSISTOR High DC current gain:125 VOLTShFE min = 20 at IC = 25 A250 WATTShFE min = 10 at IC = 50 A Low VCE(sat):VCE(sat) max. = 0.6 V at
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
