BUV20 Specs and Replacement
Type Designator: BUV20
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 125 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 50 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3
BUV20 Substitution
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BUV20 datasheet
BUV20 HIGH CURRENT NPN SILICON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH RUGGEDNESS APPLICATIONS 1 LINEAR AND SWITCHING INDUSTRIAL 2 EQUIPMENT SWITCHING REGULATORS TO-3 DESCRIPTION (version "S") The BUV20 is silicon Multiepitaxial Planar NPN transistor mounted in jedec TO-3 metal case. ... See More ⇒
isc Silicon NPN Power Transistor BUV20 DESCRIPTION Low Collector Saturation Voltage- V = 0.6V(Max.) @I = 25A CE(sat) C High DC Current Gain- h = 20(Min.)@ I = 25A FE C High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed, high current, high power applications. Absolute maximum rat... See More ⇒
Order this document MOTOROLA by BUV20/D SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series 50 AMPERES NPN Silicon Power Transistor NPN SILICON POWER . . . designed for high speed, high current, high power applications. METAL TRANSISTOR High DC current gain 125 VOLTS hFE min = 20 at IC = 25 A 250 WATTS hFE min = 10 at IC = 50 A Low VCE(sat) VCE(sat) max. = 0.6 V at ... See More ⇒
Detailed specifications: BUV11, BUV11CECC, BUV11N, BUV12, BUV18, BUV18X, BUV19, BUV1O, BC558, BUV21, BUV21N, BUV22, BUV23, BUV24, BUV25, BUV26, BUV26A
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