MJ10024 Datasheet, Equivalent, Cross Reference Search

Order this documentMOTOROLAby MJ10022/DSEMICONDUCTOR TECHNICAL DATAMJ10022MJ10023Designer's Data SheetSWITCHMODE Series40 AMPERENPN Silicon Power DarlingtonNPN SILICONPOWER DAR

Order this documentMOTOROLAby MJ10020/DSEMICONDUCTOR TECHNICAL DATAMJ10020MJ10021Designer's Data SheetSWITCHMODE Series60 AMPERENPN Silicon Power DarlingtonNPN SILICONPOWER DAR

Order this documentMOTOROLAby MJ10007/DSEMICONDUCTOR TECHNICAL DATAMJ10007*Designer's Data Sheet*Motorola Preferred DeviceSWITCHMODE SeriesNPN Silicon Power Darlington10 AMPERENP

Order this documentMOTOROLAby MJ1000/DSEMICONDUCTOR TECHNICAL DATANPNMJ1000Medium-Power Complementary*MJ1001Silicon Transistors*Motorola Preferred Device. . . for use as output

Order this documentMOTOROLAby MJ10009/DSEMICONDUCTOR TECHNICAL DATAMJ10009*Designer's Data Sheet*Motorola Preferred DeviceSWITCHMODE Series20 AMPERENPN Silicon Power DarlingtonNP

Order this documentMOTOROLAby MJ10015/DSEMICONDUCTOR TECHNICAL DATAMJ10015MJ10016SWITCHMODE SeriesNPN Silicon Power Darlington50 AMPERETransistors with Base-EmitterNPN SILICONPO

Order this documentMOTOROLAby MJ10012/DSEMICONDUCTOR TECHNICAL DATAMJ10012MJH10012NPN Silicon Power DarlingtonTransistor10 AMPEREThe MJ10012 and MJH10012 are high voltage, high curr

Order this documentMOTOROLAby MJ10005/DSEMICONDUCTOR TECHNICAL DATA*MJ10005Designer's Data Sheet*Motorola Preferred DeviceSWITCHMODE Series20 AMPERENPN Silicon Power Darlington

Order this documentMOTOROLAby MJ10000/DSEMICONDUCTOR TECHNICAL DATAMJ10000Designer's Data Sheet20 AMPERESWITCHMODE SeriesNPN SILICONPOWER DARLINGTONNPN Silicon Power Darlington

COMSETSEMICONDUCTORSSEMICONDUCTORSMJ900 MJ901 PNPMJ1000 MJ1001 NPNCOMPLEMENTARY POWER DARLINGTONSThe MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bastransistors in monolithic Darlington configuration, and are mountedin JEDEC TO-3 metal case. They are intended for usein power linear and switching applications.PNP types are the MJ900 and MJ901, and their compl

MJ900 MJ901 PNP MJ1000 MJ1001 NPN COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their complementary NPN types are the MJ10

isc Silicon NPN Darlington Power Transistor MJ10003DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V (Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed , power switching inInductive circuits where fall time is critical. They are partic-ularly sui

isc Silicon NPN Darlington Power Transistor MJ10002DESCRIPTIONLow Collector-Emitter Sustaining VoltageHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed , power switching inInductive circuits where fall time is critical. They are partic-ularly suit

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJ10012 DESCRIPTION With TO-3 package High voltage,high current DARLINGTON APPLICATIONS Automotive ignition Switching regulator Motor control applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbolute maximum ratings(Ta=25

isc Silicon NPN Darlington Power Transistor MJ10012TDESCRIPTIONCollector-Emitter Sustaining Voltage-V = 400V(Min)CEO(SUS)High Power DissipationDARLINGTON100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATIN

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ1001 DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min.) High DC Current Gain- : hFE= 1000(Min.)@IC= 3A Low Collector Saturation Voltage- : VCE (sat)= 2.0V(Max.)@ IC= 3A APPLICATIONS Designed for use as output devices in complementary general purpose

isc Silicon NPN Darlington Power Transistor MJ1000DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = 3AFE CLow Collector Saturation Voltage-: V = 2.0V(Max.)@ I = 3ACE (sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devic