Биполярный транзистор MJ10024 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MJ10024
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 250 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1000 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 750 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 8 V
Макcимальный постоянный ток коллектора (Ic): 20 A
Предельная температура PN-перехода (Tj): 200 °C
Ёмкость коллекторного перехода (Cc): 500 pf
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: TO3
MJ10024 Datasheet (PDF)
mj10022r.pdf
Order this documentMOTOROLAby MJ10022/DSEMICONDUCTOR TECHNICAL DATAMJ10022MJ10023Designer's Data SheetSWITCHMODE Series40 AMPERENPN Silicon Power DarlingtonNPN SILICONPOWER DAR
mj10020r.pdf
Order this documentMOTOROLAby MJ10020/DSEMICONDUCTOR TECHNICAL DATAMJ10020MJ10021Designer's Data SheetSWITCHMODE Series60 AMPERENPN Silicon Power DarlingtonNPN SILICONPOWER DAR
mj10007r.pdf
Order this documentMOTOROLAby MJ10007/DSEMICONDUCTOR TECHNICAL DATAMJ10007*Designer's Data Sheet*Motorola Preferred DeviceSWITCHMODE SeriesNPN Silicon Power Darlington10 AMPERENP
mj1000re.pdf
Order this documentMOTOROLAby MJ1000/DSEMICONDUCTOR TECHNICAL DATANPNMJ1000Medium-Power Complementary*MJ1001Silicon Transistors*Motorola Preferred Device. . . for use as output
mj10009r.pdf
Order this documentMOTOROLAby MJ10009/DSEMICONDUCTOR TECHNICAL DATAMJ10009*Designer's Data Sheet*Motorola Preferred DeviceSWITCHMODE Series20 AMPERENPN Silicon Power DarlingtonNP
mj10015r.pdf
Order this documentMOTOROLAby MJ10015/DSEMICONDUCTOR TECHNICAL DATAMJ10015MJ10016SWITCHMODE SeriesNPN Silicon Power Darlington50 AMPERETransistors with Base-EmitterNPN SILICONPO
mj10012 mj10012r.pdf
Order this documentMOTOROLAby MJ10012/DSEMICONDUCTOR TECHNICAL DATAMJ10012MJH10012NPN Silicon Power DarlingtonTransistor10 AMPEREThe MJ10012 and MJH10012 are high voltage, high curr
mj10005r.pdf
Order this documentMOTOROLAby MJ10005/DSEMICONDUCTOR TECHNICAL DATA*MJ10005Designer's Data Sheet*Motorola Preferred DeviceSWITCHMODE Series20 AMPERENPN Silicon Power Darlington
mj10000r.pdf
Order this documentMOTOROLAby MJ10000/DSEMICONDUCTOR TECHNICAL DATAMJ10000Designer's Data Sheet20 AMPERESWITCHMODE SeriesNPN SILICONPOWER DARLINGTONNPN Silicon Power Darlington
mj900-mj901-mj1000-mj1001-1.pdf
COMSETSEMICONDUCTORSSEMICONDUCTORSMJ900 MJ901 PNPMJ1000 MJ1001 NPNCOMPLEMENTARY POWER DARLINGTONSThe MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bastransistors in monolithic Darlington configuration, and are mountedin JEDEC TO-3 metal case. They are intended for usein power linear and switching applications.PNP types are the MJ900 and MJ901, and their compl
mj900-mj901-mj1000-mj1001.pdf
MJ900 MJ901 PNP MJ1000 MJ1001 NPN COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their complementary NPN types are the MJ10
mj10003.pdf
isc Silicon NPN Darlington Power Transistor MJ10003DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V (Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed , power switching inInductive circuits where fall time is critical. They are partic-ularly sui
mj10002.pdf
isc Silicon NPN Darlington Power Transistor MJ10002DESCRIPTIONLow Collector-Emitter Sustaining VoltageHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed , power switching inInductive circuits where fall time is critical. They are partic-ularly suit
mj10012.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJ10012 DESCRIPTION With TO-3 package High voltage,high current DARLINGTON APPLICATIONS Automotive ignition Switching regulator Motor control applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbolute maximum ratings(Ta=25
mj10012t.pdf
isc Silicon NPN Darlington Power Transistor MJ10012TDESCRIPTIONCollector-Emitter Sustaining Voltage-V = 400V(Min)CEO(SUS)High Power DissipationDARLINGTON100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATIN
mj1001.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ1001 DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min.) High DC Current Gain- : hFE= 1000(Min.)@IC= 3A Low Collector Saturation Voltage- : VCE (sat)= 2.0V(Max.)@ IC= 3A APPLICATIONS Designed for use as output devices in complementary general purpose
mj1000.pdf
isc Silicon NPN Darlington Power Transistor MJ1000DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = 3AFE CLow Collector Saturation Voltage-: V = 2.0V(Max.)@ I = 3ACE (sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devic
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , C3198 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: D64EV6