MJ10024 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJ10024
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 250 W
Tensión colector-base (Vcb): 1000 V
Tensión colector-emisor (Vce): 750 V
Tensión emisor-base (Veb): 8 V
Corriente del colector DC máxima (Ic): 20 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 500 pF
Ganancia de corriente contínua (hfe): 50
Empaquetado / Estuche: TO3
Búsqueda de reemplazo de transistor bipolar MJ10024
MJ10024 Datasheet (PDF)
4.1. mj10022r.pdf 
Size:300K _motorola
O r d e r t h i s d o c u m e n t M O T O R O L A b y M J 1 0 0 2 2 / D S E M I C O N D U C T O R T E C H N I C A L D A T A M J 1 0 0 2 2 M J 1 0 0 2 3 D e s i g n e r ' s D a t a S h e e t S W I T C H M O D E S e r i e s 4 0 A M P E R E N P N S i l i c o n P o w e r D a r l i n g t o n N P N S I L I C O N P O W E R D A R
4.2. mj10020r.pdf Size:293K _motorola
O r d e r t h i s d o c u m e n t M O T O R O L A b y M J 1 0 0 2 0 / D S E M I C O N D U C T O R T E C H N I C A L D A T A M J 1 0 0 2 0 M J 1 0 0 2 1 D e s i g n e r ' s D a t a S h e e t S W I T C H M O D E S e r i e s 6 0 A M P E R E N P N S i l i c o n P o w e r D a r l i n g t o n N P N S I L I C O N P O W E R D A R
5.1. mj1000re.pdf Size:139K _motorola
O r d e r t h i s d o c u m e n t M O T O R O L A b y M J 1 0 0 0 / D S E M I C O N D U C T O R T E C H N I C A L D A T A N P N M J 1 0 0 0 M e d i u m - P o w e r C o m p l e m e n t a r y * M J 1 0 0 1 S i l i c o n T r a n s i s t o r s * M o t o r o l a P r e f e r r e d D e v i c e . . . f o r u s e a s o u t p u t
5.2. mj10005r.pdf Size:229K _motorola
O r d e r t h i s d o c u m e n t M O T O R O L A b y M J 1 0 0 0 5 / D S E M I C O N D U C T O R T E C H N I C A L D A T A * M J 1 0 0 0 5 D e s i g n e r ' s D a t a S h e e t * M o t o r o l a P r e f e r r e d D e v i c e S W I T C H M O D E S e r i e s 2 0 A M P E R E N P N S i l i c o n P o w e r D a r l i n g t o n
5.3. mj10009r.pdf Size:235K _motorola
O r d e r t h i s d o c u m e n t M O T O R O L A b y M J 1 0 0 0 9 / D S E M I C O N D U C T O R T E C H N I C A L D A T A M J 1 0 0 0 9 * D e s i g n e r ' s D a t a S h e e t * M o t o r o l a P r e f e r r e d D e v i c e S W I T C H M O D E S e r i e s 2 0 A M P E R E N P N S i l i c o n P o w e r D a r l i n g t o n N P
5.4. mj10000r.pdf Size:212K _motorola
O r d e r t h i s d o c u m e n t M O T O R O L A b y M J 1 0 0 0 0 / D S E M I C O N D U C T O R T E C H N I C A L D A T A M J 1 0 0 0 0 D e s i g n e r ' s D a t a S h e e t 2 0 A M P E R E S W I T C H M O D E S e r i e s N P N S I L I C O N P O W E R D A R L I N G T O N N P N S i l i c o n P o w e r D a r l i n g t o n
5.5. mj10012 mj10012r.pdf Size:191K _motorola
O r d e r t h i s d o c u m e n t M O T O R O L A b y M J 1 0 0 1 2 / D S E M I C O N D U C T O R T E C H N I C A L D A T A M J 1 0 0 1 2 M J H 1 0 0 1 2 N P N S i l i c o n P o w e r D a r l i n g t o n T r a n s i s t o r 1 0 A M P E R E T h e M J 1 0 0 1 2 a n d M J H 1 0 0 1 2 a r e h i g h v o l t a g e , h i g h c u r r
5.6. mj10015r.pdf Size:217K _motorola
O r d e r t h i s d o c u m e n t M O T O R O L A b y M J 1 0 0 1 5 / D S E M I C O N D U C T O R T E C H N I C A L D A T A M J 1 0 0 1 5 M J 1 0 0 1 6 S W I T C H M O D E S e r i e s N P N S i l i c o n P o w e r D a r l i n g t o n 5 0 A M P E R E T r a n s i s t o r s w i t h B a s e - E m i t t e r N P N S I L I C O N P O
5.7. mj10007r.pdf Size:228K _motorola
O r d e r t h i s d o c u m e n t M O T O R O L A b y M J 1 0 0 0 7 / D S E M I C O N D U C T O R T E C H N I C A L D A T A M J 1 0 0 0 7 * D e s i g n e r ' s D a t a S h e e t * M o t o r o l a P r e f e r r e d D e v i c e S W I T C H M O D E S e r i e s N P N S i l i c o n P o w e r D a r l i n g t o n 1 0 A M P E R E N P
5.8. mj900-mj901-mj1000-mj1001-1.pdf Size:207K _comset
COMSET SEMICONDUCTORS SEMICONDUCTORS MJ900 – MJ901 PNP MJ1000 – MJ1001 NPN COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their compl
5.9. mj900-mj901-mj1000-mj1001.pdf Size:170K _comset
MJ900 – MJ901 PNP MJ1000 – MJ1001 NPN COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their complementary NPN types are the MJ10
5.10. mj10012t.pdf Size:216K _inchange_semiconductor
isc Silicon NPN Darlington Power Transistor MJ10012T DESCRIPTION ·Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) ·High Power Dissipation ·DARLINGTON ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Automotive ignition ·Switching regulator ·Motor control applications ABSOLUTE MAXIMUM RATIN
5.11. mj10003.pdf Size:212K _inchange_semiconductor
isc Silicon NPN Darlington Power Transistor MJ10003 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : V = 400V (Min.) CEO(SUS) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed , power switching in Inductive circuits where fall time is critical. They are partic- ularly sui
5.12. mj10002.pdf Size:211K _inchange_semiconductor
isc Silicon NPN Darlington Power Transistor MJ10002 DESCRIPTION ·Low Collector-Emitter Sustaining Voltage ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed , power switching in Inductive circuits where fall time is critical. They are partic- ularly suit
5.13. mj1000.pdf Size:206K _inchange_semiconductor
isc Silicon NPN Darlington Power Transistor MJ1000 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 60V(Min.) (BR)CEO ·High DC Current Gain- : h = 1000(Min.)@I = 3A FE C ·Low Collector Saturation Voltage- : V = 2.0V(Max.)@ I = 3A CE (sat) C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devic
5.14. mj10012.pdf Size:116K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJ10012 DESCRIPTION ·With TO-3 package ·High voltage,high current ·DARLINGTON APPLICATIONS ·Automotive ignition ·Switching regulator ·Motor control applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Abolute maximum ratings(Ta=25
5.15. mj1001.pdf Size:101K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ1001 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 3A ·Low Collector Saturation Voltage- : VCE (sat)= 2.0V(Max.)@ IC= 3A APPLICATIONS ·Designed for use as output devices in complementary general purpose
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
