MJ10024 Todos los transistores

 

MJ10024 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJ10024

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 250 W

Tensión colector-base (Vcb): 1000 V

Tensión colector-emisor (Vce): 750 V

Tensión emisor-base (Veb): 8 V

Corriente del colector DC máxima (Ic): 20 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 500 pF

Ganancia de corriente contínua (hfe): 50

Empaquetado / Estuche: TO3

Búsqueda de reemplazo de transistor bipolar MJ10024

 

MJ10024 Datasheet (PDF)

4.1. mj10022r.pdf Size:300K _motorola

MJ10024
MJ10024

Order this document MOTOROLA by MJ10022/D SEMICONDUCTOR TECHNICAL DATA MJ10022 MJ10023 Designer's Data Sheet SWITCHMODE Series 40 AMPERE NPN Silicon Power Darlington NPN SILICON POWER DAR

4.2. mj10020r.pdf Size:293K _motorola

MJ10024
MJ10024

Order this document MOTOROLA by MJ10020/D SEMICONDUCTOR TECHNICAL DATA MJ10020 MJ10021 Designer's Data Sheet SWITCHMODE Series 60 AMPERE NPN Silicon Power Darlington NPN SILICON POWER DAR

 5.1. mj1000re.pdf Size:139K _motorola

MJ10024
MJ10024

Order this document MOTOROLA by MJ1000/D SEMICONDUCTOR TECHNICAL DATA NPN MJ1000 Medium-Power Complementary * MJ1001 Silicon Transistors *Motorola Preferred Device . . . for use as output

5.2. mj10005r.pdf Size:229K _motorola

MJ10024
MJ10024

Order this document MOTOROLA by MJ10005/D SEMICONDUCTOR TECHNICAL DATA * MJ10005 Designer's Data Sheet *Motorola Preferred Device SWITCHMODE Series 20 AMPERE NPN Silicon Power Darlington

 5.3. mj10009r.pdf Size:235K _motorola

MJ10024
MJ10024

Order this document MOTOROLA by MJ10009/D SEMICONDUCTOR TECHNICAL DATA MJ10009* Designer's Data Sheet *Motorola Preferred Device SWITCHMODE Series 20 AMPERE NPN Silicon Power Darlington NP

5.4. mj10000r.pdf Size:212K _motorola

MJ10024
MJ10024

Order this document MOTOROLA by MJ10000/D SEMICONDUCTOR TECHNICAL DATA MJ10000 Designer's Data Sheet 20 AMPERE SWITCHMODE Series NPN SILICON POWER DARLINGTON NPN Silicon Power Darlington

 5.5. mj10012 mj10012r.pdf Size:191K _motorola

MJ10024
MJ10024

Order this document MOTOROLA by MJ10012/D SEMICONDUCTOR TECHNICAL DATA MJ10012 MJH10012 NPN Silicon Power Darlington Transistor 10 AMPERE The MJ10012 and MJH10012 are high voltage, high curr

5.6. mj10015r.pdf Size:217K _motorola

MJ10024
MJ10024

Order this document MOTOROLA by MJ10015/D SEMICONDUCTOR TECHNICAL DATA MJ10015 MJ10016 SWITCHMODE Series NPN Silicon Power Darlington 50 AMPERE Transistors with Base-Emitter NPN SILICON PO

5.7. mj10007r.pdf Size:228K _motorola

MJ10024
MJ10024

Order this document MOTOROLA by MJ10007/D SEMICONDUCTOR TECHNICAL DATA MJ10007* Designer's Data Sheet *Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Darlington 10 AMPERE NP

5.8. mj900-mj901-mj1000-mj1001-1.pdf Size:207K _comset

MJ10024
MJ10024

COMSET SEMICONDUCTORS SEMICONDUCTORS MJ900 – MJ901 PNP MJ1000 – MJ1001 NPN COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their compl

5.9. mj900-mj901-mj1000-mj1001.pdf Size:170K _comset

MJ10024
MJ10024

MJ900 – MJ901 PNP MJ1000 – MJ1001 NPN COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their complementary NPN types are the MJ10

5.10. mj10012t.pdf Size:216K _inchange_semiconductor

MJ10024
MJ10024

isc Silicon NPN Darlington Power Transistor MJ10012T DESCRIPTION ·Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) ·High Power Dissipation ·DARLINGTON ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Automotive ignition ·Switching regulator ·Motor control applications ABSOLUTE MAXIMUM RATIN

5.11. mj10003.pdf Size:212K _inchange_semiconductor

MJ10024
MJ10024

isc Silicon NPN Darlington Power Transistor MJ10003 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : V = 400V (Min.) CEO(SUS) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed , power switching in Inductive circuits where fall time is critical. They are partic- ularly sui

5.12. mj10002.pdf Size:211K _inchange_semiconductor

MJ10024
MJ10024

isc Silicon NPN Darlington Power Transistor MJ10002 DESCRIPTION ·Low Collector-Emitter Sustaining Voltage ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed , power switching in Inductive circuits where fall time is critical. They are partic- ularly suit

5.13. mj1000.pdf Size:206K _inchange_semiconductor

MJ10024
MJ10024

isc Silicon NPN Darlington Power Transistor MJ1000 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 60V(Min.) (BR)CEO ·High DC Current Gain- : h = 1000(Min.)@I = 3A FE C ·Low Collector Saturation Voltage- : V = 2.0V(Max.)@ I = 3A CE (sat) C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devic

5.14. mj10012.pdf Size:116K _inchange_semiconductor

MJ10024
MJ10024

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJ10012 DESCRIPTION ·With TO-3 package ·High voltage,high current ·DARLINGTON APPLICATIONS ·Automotive ignition ·Switching regulator ·Motor control applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Abolute maximum ratings(Ta=25

5.15. mj1001.pdf Size:101K _inchange_semiconductor

MJ10024
MJ10024

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ1001 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 3A ·Low Collector Saturation Voltage- : VCE (sat)= 2.0V(Max.)@ IC= 3A APPLICATIONS ·Designed for use as output devices in complementary general purpose

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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