MJE2801 Datasheet. Specs and Replacement

Type Designator: MJE2801

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 90 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO126

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MJE2801 datasheet

 0.1. Size:209K  inchange semiconductor

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MJE2801

isc Silicon NPN Power Transistor MJE2801T DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High DC Current Gain- h = 25-100@I = 3A FE C Complement to Type MJE2901T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as an output device in complementary audio amplifiers up to 35 watts mus... See More ⇒

Detailed specifications: MJE2520, MJE2521, MJE2522, MJE2523, MJE253, MJE254, MJE270, MJE271, C3198, MJE2801K, MJE2801T, MJE29, MJE2901, MJE2901K, MJE2901T, MJE2955, MJE2955K

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