All Transistors. MJE2801 Datasheet

 

MJE2801 Datasheet, Equivalent, Cross Reference Search


   Type Designator: MJE2801
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 90 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO126

 MJE2801 Transistor Equivalent Substitute - Cross-Reference Search

   

MJE2801 Datasheet (PDF)

 0.1. Size:209K  inchange semiconductor
 mje2801t.pdf

MJE2801 MJE2801

isc Silicon NPN Power Transistor MJE2801TDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh DC Current Gain-: h = 25-100@I = 3AFE CComplement to Type MJE2901TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as an output device in complementaryaudio amplifiers up to 35 watts mus

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , C3198 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SC100 | TTA0002 | MJE5191J | HA1695 | 2N5825 | 2SA1306B | KTA1940

 

 
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