All Transistors. MJE2801 Datasheet

 

MJE2801 Datasheet and Replacement


   Type Designator: MJE2801
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 90 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO126
 

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MJE2801 Datasheet (PDF)

 0.1. Size:209K  inchange semiconductor
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MJE2801

isc Silicon NPN Power Transistor MJE2801TDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh DC Current Gain-: h = 25-100@I = 3AFE CComplement to Type MJE2901TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as an output device in complementaryaudio amplifiers up to 35 watts mus

Datasheet: MJE2520 , MJE2521 , MJE2522 , MJE2523 , MJE253 , MJE254 , MJE270 , MJE271 , 13005 , MJE2801K , MJE2801T , MJE29 , MJE2901 , MJE2901K , MJE2901T , MJE2955 , MJE2955K .

History: TIP112F

Keywords - MJE2801 transistor datasheet

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