2STA2510 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2STA2510

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 100

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 25

Maximum junction temperature (Tj), °C:

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of 2STA2510 transistor: TO3P

2STA2510 Equivalent Transistors - Cross-Reference Search

2STA2510 PDF document for downloads:

1.1. 2sta2510.pdf Size:146K _st

2STA2510 High power PNP epitaxial planar bipolar transistor Features ¦ High breakdown voltage VCEO = -100 V ¦ Complementary to 2STC2510 ¦ Typical ft = 20 MHz ¦ Fully characterized at 125 oC 3 2 Application 1 TO-3P ¦ Audio power amplifier Description Figure 1. Internal schematic diagram The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Table 1. Device summary Order code Marking Package Packaging 2STA2510 2STA2510 TO-3P Tube November 2008 Rev 3 1/8 www.st.com A8 Electrical ratings 2STA2510 1 Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) -100 V VCEO Collector-emitter voltage (IB = 0) -100 V VEBO Emitter-base voltage (IC = 0) -6 V IC Collector current -25 A ICM Collector peak current (tP < 5 ms) -50 A PTOT Total dissipation at Tc = 25 °C 125 W Tst

5.1. 2sta2121.pdf Size:139K _st

2STA2121 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO = -250 V Complementary to 2STC5949 Typical ft = 25 MHz Fully characterized at 125 oC Application Audio power amplifier TO-264 Description The device is a PNP transistor manufactured Figure 1. Internal schematic diagram using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Table 1. Device summary Order code Marking Package Packaging 2STA2121 2STA2121 TO-264 Tube November 2008 Rev 3 1/8 www.st.com 8 Electrical ratings 2STA2121 1 Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) -250 V VCEO Collector-emitter voltage (IB = 0) -250 V VEBO Emitter-base voltage (IC = 0) -6 V IC Collector current -17 A ICM Collector peak current (tP < 5ms) -34 A PTOT Total dissipation at Tc = 25 °C 220 W Tstg Storage temperature -

5.2. 2sta2120.pdf Size:152K _st

2STA2120 High power PNP epitaxial planar bipolar transistor Features ¦ High breakdown voltage VCEO = -250 V ¦ Complementary to 2STC5948 ¦ Typical ft = 25 MHz ¦ Fully characterized at 125 oC Application 3 2 ¦ Audio power amplifier 1 TO-3P Description The device is a PNP transistor manufactured Figure 1. Internal schematic diagram using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Table 1. Device summary Order code Marking Package Packaging 2STA2120 2STA2120 TO-3P Tube November 2008 Rev 3 1/8 www.st.com 8 Electrical ratings 2STA2120 1 Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) -250 V VCEO Collector-emitter voltage (IB = 0) -250 V VEBO Emitter-base voltage (IC = 0) -6 V IC Collector current -17 A ICM Collector peak current (tP < 5 ms) -34 A PTOT Total dissipation at Tc = 25 °C 200 W Tstg Storage t

See also transistors datasheet: 2ST31A , 2ST5949 , 2STA1694 , 2STA1695 , 2STA1943 , 2STA1962 , 2STA2120 , 2STA2121 , 2N3866 , 2STC2510 , 2STC4467 , 2STC4468 , 2STC5200 , 2STC5242 , 2STC5949 , 2STD1665 , 2STF1340 .

Keywords