2STA2510 Datasheet and Replacement
Type Designator: 2STA2510
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO3P
2STA2510 Substitution
2STA2510 Datasheet (PDF)
2sta2510.pdf

2STA2510High power PNP epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = -100 V Complementary to 2STC2510 Typical ft = 20 MHz Fully characterized at 125 oC32Application1TO-3P Audio power amplifierDescriptionFigure 1. Internal schematic diagramThe device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor fo
2sta2121.pdf

2STA2121High power PNP epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = -250 V Complementary to 2STC5949 Typical ft = 25 MHz Fully characterized at 125 oCApplication Audio power amplifierTO-264DescriptionThe device is a PNP transistor manufactured Figure 1. Internal schematic diagramusing new BiT-LA (Bipolar transistor for linear amplifier) t
2sta2120.pdf

2STA2120High power PNP epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = -250 V Complementary to 2STC5948 Typical ft = 25 MHz Fully characterized at 125 oCApplication32 Audio power amplifier1TO-3PDescriptionThe device is a PNP transistor manufactured Figure 1. Internal schematic diagramusing new BiT-LA (Bipolar transistor fo
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2N534 | MMUN2111LT1 | KSP6520 | 2N3636S | 2N5664SM | 2N6213 | 2N6327
Keywords - 2STA2510 transistor datasheet
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History: 2N534 | MMUN2111LT1 | KSP6520 | 2N3636S | 2N5664SM | 2N6213 | 2N6327



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