2STA2510 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2STA2510
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO3P
2STA2510 Transistor Equivalent Substitute - Cross-Reference Search
2STA2510 Datasheet (PDF)
2sta2510.pdf
2STA2510High power PNP epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = -100 V Complementary to 2STC2510 Typical ft = 20 MHz Fully characterized at 125 oC32Application1TO-3P Audio power amplifierDescriptionFigure 1. Internal schematic diagramThe device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor fo
2sta2121.pdf
2STA2121High power PNP epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = -250 V Complementary to 2STC5949 Typical ft = 25 MHz Fully characterized at 125 oCApplication Audio power amplifierTO-264DescriptionThe device is a PNP transistor manufactured Figure 1. Internal schematic diagramusing new BiT-LA (Bipolar transistor for linear amplifier) t
2sta2120.pdf
2STA2120High power PNP epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = -250 V Complementary to 2STC5948 Typical ft = 25 MHz Fully characterized at 125 oCApplication32 Audio power amplifier1TO-3PDescriptionThe device is a PNP transistor manufactured Figure 1. Internal schematic diagramusing new BiT-LA (Bipolar transistor fo
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
