2STA2510 Todos los transistores

 

2STA2510 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2STA2510

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 125 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 25 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 20 MHz

Ganancia de corriente contínua (hFE): 40

Encapsulados: TO3P

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2STA2510 datasheet

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2sta2510.pdf pdf_icon

2STA2510

2STA2510 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO = -100 V Complementary to 2STC2510 Typical ft = 20 MHz Fully characterized at 125 oC 3 2 Application 1 TO-3P Audio power amplifier Description Figure 1. Internal schematic diagram The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor fo

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2sta2121.pdf pdf_icon

2STA2510

2STA2121 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO = -250 V Complementary to 2STC5949 Typical ft = 25 MHz Fully characterized at 125 oC Application Audio power amplifier TO-264 Description The device is a PNP transistor manufactured Figure 1. Internal schematic diagram using new BiT-LA (Bipolar transistor for linear amplifier) t

 9.2. Size:152K  st
2sta2120.pdf pdf_icon

2STA2510

2STA2120 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO = -250 V Complementary to 2STC5948 Typical ft = 25 MHz Fully characterized at 125 oC Application 3 2 Audio power amplifier 1 TO-3P Description The device is a PNP transistor manufactured Figure 1. Internal schematic diagram using new BiT-LA (Bipolar transistor fo

Otros transistores... 2ST31A , 2ST5949 , 2STA1694 , 2STA1695 , 2STA1943 , 2STA1962 , 2STA2120 , 2STA2121 , 2SB817 , 2STC2510 , 2STC4467 , 2STC4468 , 2STC5200 , 2STC5242 , 2STC5949 , 2STD1665 , 2STF1340 .

 

 

 

 

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