2STC2510 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2STC2510
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO3P
2STC2510 Transistor Equivalent Substitute - Cross-Reference Search
2STC2510 Datasheet (PDF)
..1. Size:145K st
2stc2510.pdf
2stc2510.pdf
2STC2510High power NPN epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = 100 V Complementary to 2STA2510 Typical ft = 20 MHz Fully characterized at 125 oC32Application1TO-3P Audio power amplifierDescriptionFigure 1. Internal schematic diagramThe device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2SC945 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
