2STC2510 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2STC2510
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO3P
2STC2510 Transistor Equivalent Substitute - Cross-Reference Search
2STC2510 Datasheet (PDF)
1.1. 2stc2510.pdf 
Size:145K _st
2STC2510 High power NPN epitaxial planar bipolar transistor Features ¦ High breakdown voltage VCEO = 100 V ¦ Complementary to 2STA2510 ¦ Typical ft = 20 MHz ¦ Fully characterized at 125 oC 3 2 Application 1 TO-3P ¦ Audio power amplifier Description Figure 1. Internal schematic diagram The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amp
Datasheet: 2ST5949 , 2STA1694 , 2STA1695 , 2STA1943 , 2STA1962 , 2STA2120 , 2STA2121 , 2STA2510 , BF494 , 2STC4467 , 2STC4468 , 2STC5200 , 2STC5242 , 2STC5949 , 2STD1665 , 2STF1340 , 2STF1360 .
