All Transistors. 2STC2510 Datasheet

 

2STC2510 Datasheet and Replacement


   Type Designator: 2STC2510
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 125 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 25 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO3P
 

 2STC2510 Substitution

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2STC2510 Datasheet (PDF)

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2STC2510

2STC2510High power NPN epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = 100 V Complementary to 2STA2510 Typical ft = 20 MHz Fully characterized at 125 oC32Application1TO-3P Audio power amplifierDescriptionFigure 1. Internal schematic diagramThe device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2N6247 | 2N5036 | 2N5551C | 2N5037 | 2N5932 | CSC3199

Keywords - 2STC2510 transistor datasheet

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