All Transistors. 2STC2510 Datasheet

 

2STC2510 Datasheet and Replacement


   Type Designator: 2STC2510
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 125 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 25 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO3P
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2STC2510 Datasheet (PDF)

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2STC2510

2STC2510High power NPN epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = 100 V Complementary to 2STA2510 Typical ft = 20 MHz Fully characterized at 125 oC32Application1TO-3P Audio power amplifierDescriptionFigure 1. Internal schematic diagramThe device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: CDB550B | MRF5812 | 3CA4F | D7ST4010 | CSC2786MF | MCH3245 | K2117A

Keywords - 2STC2510 transistor datasheet

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