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2STC2510 Specs and Replacement

Type Designator: 2STC2510

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 125 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 25 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 20 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO3P

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2STC2510 datasheet

 ..1. Size:145K  st

2stc2510.pdf pdf_icon

2STC2510

2STC2510 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 100 V Complementary to 2STA2510 Typical ft = 20 MHz Fully characterized at 125 oC 3 2 Application 1 TO-3P Audio power amplifier Description Figure 1. Internal schematic diagram The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for... See More ⇒

Detailed specifications: 2ST5949 , 2STA1694 , 2STA1695 , 2STA1943 , 2STA1962 , 2STA2120 , 2STA2121 , 2STA2510 , S9013 , 2STC4467 , 2STC4468 , 2STC5200 , 2STC5242 , 2STC5949 , 2STD1665 , 2STF1340 , 2STF1360 .

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