FTC1008 Datasheet, Equivalent, Cross Reference Search
Type Designator: FTC1008
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO92
FTC1008 Transistor Equivalent Substitute - Cross-Reference Search
FTC1008 Datasheet (PDF)
ftc1008.pdf
SEMICONDUCTORFTC1008TECHNICAL DATATO 92 FTC1008 TRANSISTOR (NPN) 1. EMITTER2. BASE FEATURES 3. COLLECTOR General Purpose Switching and Amplification MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 8 V IC Collector Current 700 mA PC Col
ftc1027.pdf
SEMICONDUCTORFTA1027TECHNICAL DATAFTC1027 TRANSISTOR (NPN) BFEATURES Complementary to FTA1023 High Voltage Applications EDIM MILLIMETERSA 8.2 MAXDMAXIMUM RATINGS (Ta=25 unless otherwise noted) B 5.1 MAXC 1.58 MAXD 0.55 MAXE 0.7 TYP F 1.27 TYPG 2.54 TYPFH 14.20 MAX MAXIMUM RATINGS (Ta=25 unless otherwise noted) GJ 0.45 MAX L 4.10 MAX Symbol
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N3906 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
