All Transistors. 2SA1151 Datasheet

 

2SA1151 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA1151
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 180 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO92

 2SA1151 Transistor Equivalent Substitute - Cross-Reference Search

   

2SA1151 Datasheet (PDF)

 8.1. Size:193K  toshiba
2sa1150.pdf

2SA1151
2SA1151

2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1150 Low Frequency Amplifier Applications Unit: mm High hFE: h = 100~320 FE Complementary to 2SC2710. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -35 VCollector-emitter voltage VCEO -30 VEmitter-base voltage VEBO -5 VCollector current I

 8.2. Size:166K  nec
2sa1156.pdf

2SA1151
2SA1151

 8.3. Size:24K  nec
2sa1153.pdf

2SA1151

Datasheet: 2SA1145O , 2SA1145Y , 2SA1146 , 2SA1147 , 2SA115 , 2SA1150 , 2SA1150O , 2SA1150Y , BC549 , 2SA1152 , 2SA1153 , 2SA1154 , 2SA1155 , 2SA1156 , 2SA1158 , 2SA116 , 2SA1160 .

 

 
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