2SA1151 PDF and Equivalents Search

 

2SA1151 Specs and Replacement

Type Designator: 2SA1151

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 180 MHz

Collector Capacitance (Cc): 4.5 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: TO92

 2SA1151 Substitution

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2SA1151 datasheet

 8.1. Size:193K  toshiba

 2sa1150.pdf pdf_icon

2SA1151

2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1150 Low Frequency Amplifier Applications Unit mm High hFE h = 100 320 FE Complementary to 2SC2710. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Collector current I... See More ⇒

 8.2. Size:166K  nec

 2sa1156.pdf pdf_icon

2SA1151

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 8.3. Size:24K  nec

 2sa1153.pdf pdf_icon

2SA1151

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Detailed specifications: 2SA1145O, 2SA1145Y, 2SA1146, 2SA1147, 2SA115, 2SA1150, 2SA1150O, 2SA1150Y, 2N4401, 2SA1152, 2SA1153, 2SA1154, 2SA1155, 2SA1156, 2SA1158, 2SA116, 2SA1160

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