All Transistors. 2SA1151 Datasheet

 

2SA1151 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SA1151

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 180 MHz

Collector Capacitance (Cc): 4.5 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: TO92

2SA1151 Transistor Equivalent Substitute - Cross-Reference Search

 

2SA1151 Datasheet (PDF)

4.1. 2sa1150.pdf Size:193K _toshiba

2SA1151
2SA1151

2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1150 Low Frequency Amplifier Applications Unit: mm • High hFE: h = 100~320 FE • Complementary to 2SC2710. Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Collector current I

4.2. 2sa1156.pdf Size:166K _nec

2SA1151
2SA1151

 4.3. 2sa1153.pdf Size:24K _nec

2SA1151

Datasheet: 2SA1145O , 2SA1145Y , 2SA1146 , 2SA1147 , 2SA115 , 2SA1150 , 2SA1150O , 2SA1150Y , BC237 , 2SA1152 , 2SA1153 , 2SA1154 , 2SA1155 , 2SA1156 , 2SA1158 , 2SA116 , 2SA1160 .

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