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Ordering number EN8624 2SK3095LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3095LS Applications Features Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 400 V Gate-to-Source Voltage VGSS 30 V Drain Current (DC) ID 5 A Drain Current (Pulse) IDP PW 10 s, duty cycle 1% 20 A 2.0 W Allowable Power Dissipation PD Tc=25 C25 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Enargy (Single Pulse) *1 EAS 71.4 mJ Avalanche Current *2 IAV 5 A *1 VDD=50V, L=5mH, IAV=5A *2 L 5mH, single pulse Electrical Characteristics at Ta=25 C Ratings Parameter Symbol Conditions Unit min typ max D... See More ⇒

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