View fqp18n50v2 fqpf18n50v2 detailed specification:
QFET FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET Features Description 550V @TJ = 150 C These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Typ. RDS(on) = 0.265 @VGS = 10 V DMOS technology. Low gate charge (typical 42 nC) This advanced technology has been especially tailored to mini- Low Crss (typical 11 pF) mize on-state resistance, provide superior switching perfor- mance, and withstand high energy pulse in the avalanche and Fast switching commutation mode. These devices are well suited for high effi- 100% avalanche tested cient switched mode power supplies, active power factor correc- tion, electronic lamp ballast based on half bridge topology. Improved dv/dt capability D ... See More ⇒
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fqp18n50v2 fqpf18n50v2.pdf Design, MOSFET, Power
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