View hy3506p hy3506b detailed specification:
HY3506P/B N-Channel Enhancement Mode MOSFET Features Pin Description 60V/190A RDS(ON)= 3.5 m (typ.) @ VGS=10V 100% avalanche tested S D G Reliable and Rugged S D Lead Free and Green Devices Available G (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Switching application Power Management for Inverter Systems. N-Channel MOSFET Ordering and Marking Information Package Code P B P TO-220FB-3L B TO-263-2L HY3506 HY3506 Assembly Material Date Code G Lead Free Device YYXXX WW YYXXXJWW G YYXXXJWW G Note HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the lead- Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defin... See More ⇒
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hy3506p hy3506b.pdf Design, MOSFET, Power
hy3506p hy3506b.pdf RoHS Compliant, Service, Triacs, Semiconductor
hy3506p hy3506b.pdf Database, Innovation, IC, Electricity
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