All Transistors. Equivalents Search

View ntmfs6h801nt1g detailed specification:

NTMFS6H801N Power MOSFET 80 V, 2.8 mW, 157 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 80 V 2.8 mW @ 10 V 157 A Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGS 20 V D (5) Continuous Drain TC = 25 C ID 157 A Current RqJC TC = 100 C 111 (Notes 1, 3) Steady State Power Dissipation TC = 25 C PD 166 W RqJC (Note 1) TC = 100 C 83 G (4) Continuous Drain TA = 25 C ID 23 A Current RqJA TA = 100 C 16 S (1,2,3) (Notes 1, 2, 3) Steady State N-CHANNEL MOSFET Power Dissipation TA = 25 C PD 3.8 W RqJA (Notes 1 & 2) TA = 100 C 1.9 Pulsed ... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 ntmfs6h801nt1g.pdf Design, MOSFET, Power

 ntmfs6h801nt1g.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ntmfs6h801nt1g.pdf Database, Innovation, IC, Electricity