View suv90n06-05 detailed specification:
SUV90N06-05 New Product Vishay Siliconix N-Channel 60-V (D-S) 200_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS V(BR)DSS (V) rDS(on) (W) ID (A) D 200_C Junction Temperature 0.0052 @ VGS = 10 V D PWM Optimized 60 90 a 0.0072 @ VGS = 4.5 V APPLICATIONS D Isolated DC/DC Converters - Primary-Side Switch D Automotive - Fan Motors D TO-262 - 12-V Boardnet - Motor Drives 1 2 3 G G D S S Top View SUV90N06-05 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS V "20 TC = 25_C 90a Continuous Drain Current (TJ = 175_C) ID _ TC = 125_C 90a A Pulsed Drain Current IDM 240 Avalanche Current IAR 75 Repetitive Avalanche Energyb L = 0.1 mH EAR 280 mJ TC = 25_C 350c Maximum Power Dissipationb PD W TA = 25_Cd 4.3 Operating Junction and Storag... See More ⇒
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suv90n06-05.pdf Design, MOSFET, Power
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BJT Parameters and How They Relate
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BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O
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