View ygw40n65f1 detailed specification:
YGW40N65F1 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A C improved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V CEsat Enhanced avalanche capability APPLICATION Uninterruptible Power Supplies Inverter Welding Converters PFC applications Converter with high switching frequency Product Package Packaging YGW40N65F1 TO247 Tube http //www.lu-semi.com 1 2020.02 / Rev4.2 YGW40N65F1 Maximum Ratings T = 25 unless otherwise specified j Parameter Symbol Value Unit Collector-Emitter Breakdown Voltage V 650 V CE DC collector current, limited by T jma... See More ⇒
Keywords - ALL TRANSISTORS SPECS
ygw40n65f1.pdf Design, MOSFET, Power
ygw40n65f1.pdf RoHS Compliant, Service, Triacs, Semiconductor
ygw40n65f1.pdf Database, Innovation, IC, Electricity
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet


