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View apt13gp120bg detailed specification:

TYPICAL PERFORMANCE CURVES APT13GP120B_S(G) 1200V APT13GP120B APT13GP120S APT13GP120BG* APT13GP120SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. B POWER MOS 7 IGBT D3PAK S C The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch G E Through Technology this IGBT is ideal for many high frequency, high voltage switching G applications and has been optimized for high frequency switchmode power supplies. C E Low Conduction Loss 100 kHz operation @ 600V, 10A Low Gate Charge 50 kHz operation @ 600V, 16A C Ultrafast Tail Current shutoff RBSOA Rated G E MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Parameter UNIT Symbol APT13GP120B_S(G) VCES Collector-Emitter Voltage 1200 Volts VGE Gate-Emitter Voltage 30 IC1 Continuous Collector Current @ TC = 25 C 41 IC2 Con... See More ⇒

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 apt13gp120bg.pdf Design, MOSFET, Power

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