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View 2n5401 detailed specification:

2N5401 PNP Silicon Transistor Description PIN Connection General purpose amplifier E High voltage application Features B High collector breakdown voltage VCBO = -160V, VCEO = -160V Low collector saturation voltage C VCE(sat)=-0.5V(MAX.) TO-92 Complementary pair with 2N5551 Ordering Information Type NO. Marking Package Code 2N5401 TO-92 2N5401 Year & Week Code Absolute maximum ratings (Ta=25 C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -160 V Collector-Emitter voltage VCEO -160 V Emitter-Base voltage VEBO -5 V Collector current IC -600 mA Collector dissipation PC 625 mW Junction temperature Tj 150 C Storage temperature Tstg -55 150 C KSD-T0A076-000 1 E B C 2N5401 Electrical Characteristics (Ta=25 C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Colle... See More ⇒

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