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SS8550 Transistors SOT-23 Plastic-Encapsulate Transistors(PNP) RHOS Features SOT-23 High Collector Current Complementary to SS8050 Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage -40 V CBO 2. EMITTER -25 V V Collector-Emitter Voltage CEO 3. COLLECTOR V Emitter-Base Voltage -5 V EBO I Collector Current -1.5 A C MARKING Y2 P Collector Power Dissipation 300 mW C R JA Thermal Resistance From Junction To Ambient 417 /W T Junction Temperature 150 j T Storage Temperature -55 +150 stg Electrical Characteristics (Ratings at 25 ambient temperature unless otherwise specified). Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =-100 A, I =0 -40 V (BR)CBO C E Collector-emitter break... See More ⇒

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