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View 2n3250 1 detailed specification:

2n3250_12n3250_1

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N3250, A/ 2N3251,A TO-18 Metal Can Package Designed for Small Signal, General Purpose and Switching Applications ABSOLUTE MAXIMUM RATINGS 2N3250 2N3250A DESCRIPTION SYMBOL UNIT 2N3251 2N3251A VCEO Collector Emitter Voltage 40 60 V VCBO Collector Base Voltage 50 60 V VEBO Emitter Base Voltage 5 V IC Collector Current Continuous 200 mA Power Dissipation @ Ta=25 C PD 360 mW Derate Above 25 C 2.06 mW/ C Power Dissipation @ Tc=25 C PD 1.2 W Derate Above 25 C 6.9 mW/ C Operating And Storage Junction Tj, Tstg - 65 to +200 C Temperature Range THERMAL RESISTANCE Rth (j-a) Junction to Ambient in free air 490 C/W Rth (j-c) Junction to Case 150 C/W ELECTRICAL CHARACTERISTICS (Ta=25 C unless specified otherwise ) DESCR... See More ⇒

 

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