View 2n5415 2n5416 detailed specification:
Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON HIGH VOLTAGE TRANSISTOR 2N 5415, 16 TO-39 Metal Can Package High Speed Switching and Linear amplifier Appliances in Military, Industrial and Commercial Equipment. ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL 2N5415 2N5416 UNITS VCEO Collector Emitter Voltage 200 300 V VCBO Collector Base Voltage 200 350 V VEBO Emitter Base Voltage 46 V IC Collector Current Continuous (--------------------1------------------) A IB Base Current Continuous (-----------------0.5------------------) A PD Power Dissipation @ Ta=50 C (--------------------1------------------) W Derate Above 25 C mW/ C PD Power Dissipation@ Tc=25 C (------------------10------------------- W Derate Above 25 C Junction Temperature Tj (--------------------200-----------------... See More ⇒
Keywords - ALL TRANSISTORS SPECS
2n5415 2n5416.pdf Design, MOSFET, Power
2n5415 2n5416.pdf RoHS Compliant, Service, Triacs, Semiconductor
2n5415 2n5416.pdf Database, Innovation, IC, Electricity
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet



