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View bd135 bd137 bd139 detailed specification:

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS BD135 BD137 BD139 TO126 Plastic Package E C B Designed for use as Audio Amplifier and Drivers Utilizing Complementary BD136, BD138, BD140 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD135 BD137 BD139 UNIT Collector -Emitter Voltage VCEO 45 60 80 V Collector -Emitter Voltage (RBE=1k ) VCER 45 60 100 V Collector -Base Voltage VCBO 45 60 100 V VEBO Emitter Base Voltage 5.0 V IC Collector Current 1.5 A ICM Collector Peak Current 2.0 A IB Base Current 0.5 A Power Dissipation @ Ta=25 C PD 1.25 W Derate above 25 C 10 mW/ C Power Dissipation @ Tc=25 C PD 12.5 W Derate above 25 C 100 mW/ C Power Dissipation @ Tc=70 C PD 8.0 W Operating And Storage Junction Tj, Tstg - 55 to +150 C Temperature Range THERMAL CHARACTERISTI... See More ⇒

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