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View mje350 detailed specification:

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL SILICON POWER TRANSISTOR MJE350 TO126 Plastic Package E C B Designed for use in Line-Operated Applications sush as Low Power, Line- Operated Series Pass and Switching Regulators ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 300 V Collector -Base Voltage VCBO 300 V VEBO Emitter Base Voltage 3.0 V IC Collector Current Continuous 500 mA Power Dissipation @ Ta=25 C PD 1.25 W Derate above 25 C 10 mW/ C Power Dissipation @ Tc=25 C PD 20 W Derate above 25 C 0.16 W/ C Operating And Storage Junction Tj, Tstg - 65 to +150 C Temperature Range THERMAL CHARACTERISTICS Junction to Ambient in free air Rth (j-a) 100 C/W Junction to Case Rth (j-c) 6.25 C/W ELECTRICAL CHARACTERISTICS (Tc=25 C unless specified othe... See More ⇒

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