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View p2n2907 a detailed specification:

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS P2N2907 P2N2907A TO-92 Plastic Package E CB Designed for switching and linear applications, DC amplifier and driver for industrial applications ABSOLUTE MAXIMUM RATINGS (Ta=25 C Unless Specified Otherwise) DESCRIPTION SYMBOL P2N2907 P2N2907A UNIT VCEO Collector Emitter Voltage 40 60 V VCBO Collector Base Voltage 60 60 V VEBO Emitter Base Voltage 5 V Collector Current ICM 600 mA Total Power Dissipation @ Ta=25 C 625 mW PD Derate above 25 C 5 mW/ C Total Power Dissipation @ TC=25 C 1.5 W PD Derate above 25 C 12 mW/ C Operating and Storage Junction Tj, Tstg - 55 to +150 C Temperature Range THERMAL RESISTANCE Rth (j-c) Junction to Case 83.3 C/W Rth (j-a) Junction to Ambient 200 C/W ELECTRICAL CHARACTERISTICS (Ta=... See More ⇒

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