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DATA SHEET MJE13004 MJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13004 and MJE13005 are Silicon NPN Power Transistors, designed for high speed power switching applications. MAXIMUM RATINGS (TC=25 C unless otherwise noted) SYMBOL MJE13004 MJE13005 UNITS Collector-Emitter Voltage VCEO 300 400 V Collector-Emitter Voltage VCEV 600 700 V Emitter-Base Voltage VEBO 9.0 V Collector Current IC 4.0 A Peak Collector Current ICM 8.0 A Base Current IB 2.0 A Peak Base Current IBM 4.0 A Power Dissipation (TA=25 C) PD 2.0 W Power Dissipation PD 75 W Operating and Storage Junction Temperature TJ,Tstg -65 to +150 C Thermal Resistance JA 62.5 C/W Thermal Resistance JC 1.67 C/W ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICEV VCE=600V, VBE(OF... See More ⇒

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