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CEM4308 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 40V, 5.8A, RDS(ON) = 38m @VGS = 10V. RDS(ON) = 50m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 S1 G1 S2 G2 1 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS 20 V Drain Current-Continuous ID 5.8 A Drain Current-Pulsed a IDM 23 A Maximum Power Dissipation PD 2.5 W Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Ambient b R JA 62.5 C/W Rev 1. 2006.Sep Details are subject to change without notice . http //www.cetsemi.com 1 CEM4308 El... See More ⇒

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