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View cep6056 ceb6056 detailed specification:

CEP6056/CEB6056 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 100A, RDS(ON) = 6.2m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V Drain Current-Continuous ID 100 A Drain Current-Pulsed a IDM 360 A Maximum Power Dissipation @ TC = 25 C 100 W PD - Derate above 25 C 0.66 W/ C Single Pulsed Avalanche Energy d EAS 272 mJ Single Pulsed Avalanche Current d IAS 33 A TJ,Tstg Operating and Store Temperature Range -55 to 175 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case R JC 1.5 C/W The... See More ⇒

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