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View cep60n06g ceb60n06g detailed specification:

cep60n06g_ceb60n06gcep60n06g_ceb60n06g

CEP60N06G/CEB60N06G N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 60A, RDS(ON) = 16m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V Drain Current-Continuous ID 60 A Drain Current-Pulsed a IDM 240 A Maximum Power Dissipation @ TC = 25 C 125 W PD - Derate above 25 C 0.83 W/ C EAS Single Pulsed Avalanche Energy d 360 mJ IAS Single Pulsed Avalanche Current d 30 A Operating and Store Temperature Range TJ,Tstg -65 to 175 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case R JC 1.2 C/W T... See More ⇒

 

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