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View cep85n75 ceb85n75 cef85n75 detailed specification:

CEP85N75/CEB85N75 CEF85N75 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP85N75 75V 12m 86A 10V CEB85N75 75V 12m 86A 10V CEF85N75 75V 12m 86A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package & TO-220F full-pak for through hole. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) TO-220 TO-220F ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Limit Parameter Symbol Units TO-220/263 TO-220F Drain-Source Voltage VDS 75 V Gate-Source Voltage VGS V 30 Drain Current-Continuous ID 86 86e A Drain Current-Pulsed a IDM f 344 344e A Maximum Power Dissipation @ TC = 25 C 200 75 W PD - Derate above 25 C 1.33 0.5 W/ C Single Pulsed Avalanche Energy d EAS 880 880 mJ Single Pulsed Avalanche Current ... See More ⇒

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