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View csd16409q3 detailed specification:

N-Channel CICLON NexFET Power MOSFETs CSD16409Q3 Features Product Summary Ultra Low Qg & Qgd VDS 25 V S 1 8 D S 1 8 D Qg 4.0 nC Low Thermal Resistance G D S 2 7 D S 2 7 D Qgd 1.0 nC S D Avalanche Rated D S S 3 6 D VGS=4.5V 9.5 m S 3 6 D D RDS(on) S D D G 4 5 D G 4 5 D VGS=10V 6.2 m Pb Free Terminal Plating Vth 2.0 V RoHS Compliant Halogen Free QFN 3.3mm x 3.3mm Plastic Package Top View Maximum Values (TA=25oC unless otherwise stated) Symbol Parameter Value Units VDS Drain to Source Voltage 25 V VGS Gate to Source Voltage +16 / -12 V Continuous Drain Current, TC = 25 C A 60 ID Continuous Drain Current1 15 A IDM Pulsed Drain Current, TA = 25 C2 90 A Power Dissipation1 PD 2.6 W Operating Junction and Storage Temperature Range TJ, TSTG -55 to 150 C Avalanche Energy, single pulse ID =38A,... See More ⇒

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 csd16409q3.pdf Design, MOSFET, Power

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