View 2n3904u detailed specification:
Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES U Compliment to 2N3906 Low current Low voltage MARKING 1A MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.2 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 Tstg Storage Temperature -55 150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10 A,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10 A,IC=0 6 V Collector cut-off current ICBO VCB=30V,IE=0 0.05 A Emitter cut-off current IEBO VEB=6V,IC=0 0.05 A Collector u... See More ⇒
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2n3904u.pdf Design, MOSFET, Power
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