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MMDT3906 MMDT3906 SOT-363 Plastic-Encapsulate Transistors General description SOT-363 Plastic-Encapsulate Transistors FEATURES DUAL TRANSISTOR (PNP+PNP) Complementary to MMDT3904 Ideal for low power amplification and switching Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V I Collector Current -Continuous -200 A C P Collector Power Dissipation 200 W C T Junction Temperature 150 J Tstg Storage Temperature -55-+150 MARKING K3N Absolute Maximum Ratings(Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10 A,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=10 A,IC=0 -5 V Emitter cut-o... See More ⇒

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