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View 2sa1015-l 2sa1015-h detailed specification:

2SC1015 PNP Transistors 3 2 1.Base Features 2.Emitter 1 3.Collector High voltage and high current VCEO =-50V(min.),IC=-150mA(max.) Simplified outline(SOT-23) Low niose NF=1dB(Typ.) at f=1KHz Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -150 mA Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 Storage Temperature Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditions Min Typ Max Unit Collector-base breakdown voltage VCBO -100 A, IE=0 -50 V Ic= Collector-emitter breakdown voltage VCEO Ic= -0.1mA, IB=0 -50 V Emitter-base breakdown voltage VEBO -100 A, IC=0 -5 V IE= Collector cut-off current ICBO VCB=-50V , IE=0 -0.1 A Collector cut-off current ICEO VCE= -50V , IB=... See More ⇒

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