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View 2sc945-l 2sc945-h detailed specification:

2SC945 NPN Transistors 3 2 1.Base 2.Emitter Features 1 3.Collector Collector current up to 150mA Simplified outline(SOT-23) High hFE linearity Complementary to 2SA733 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5 V Collector current (DC) IC 150 mA Power dissipation PC 200 mW Junction temperature Tj 150 Storage temperature range Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100 A, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA , IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=100 A, IC=0 5 V Collector cutoff current ICBO VCB = 60V, IE = 0 0.1 A Emitter cutoff current IEB... See More ⇒

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