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View 2sc3356 detailed specification:

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD 2SC3356 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 12 Vdc Collector-Base Voltage VCBO 20 Vdc Emitter-Base Voltage VEBO Vdc 3.0 Collector Current-Continuous Ic 100 mAdc - THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD Total Device Dissipation 225 mW FR-5 Board(1) TA=25 25 1.8 mW/ Derate above25 25 PD Total Device Dissipation 300 mW Alumina Substrate ,(2)TA=25 2.4 Derate above25 25 mW/ Thermal Resistance Junct... See More ⇒

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