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SOT-23 Plastic-Encapsulate MOSFETS BSS138 N-Channel 50-V(D-S) MOSFET SOT-23 FEATURE Low On-Resistance Low Gate Threshold Voltage 1. GATE Fast Switching Speed 2. SOURCE 3. DRAI Low Input / Output Leakage Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 50 V Continuous Gate-Source Voltage VGSS 12 Continuous Drain Current ID 0.34 A Power Dissipation PD 0.35 W Thermal Resistance from Junction to Ambient R JA 357 /W Operating Temperature Tj 150 Storage Temperature Tstg -55 +150 A,Dec,2010 Electrical characteristics (Ta=25 unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250 A 50 V VDS =0V, VGS = 12V 1 A Gate-body leakage IGSS VDS =0V, VGS = 10V 0.5 A VDS =0V... See More ⇒

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