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View hm10n60 hm10n60f detailed specification:

10N60 / 10N60F 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 10.0A, 600V, RDS(on) = 0.750 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 48nC) This advanced technology has been especially tailored to High ruggedness minimize on-state resistance, provide superior switching Fast switching performance, and withstand high energy pulse in the 100% avalanche tested avalanche and commutation mode. These devices are well Improved dv/dt capability suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. D G TO-220 TO-220F G D S G D S S Absolute Maximum Ratings TC = 25 Cunless otherwise noted Symbol Parameter HM10N60 HM10N60F Unit... See More ⇒

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