View 2sc3357a 2sc3357b 2sc3357c 2sc3357d 2sc3357e detailed specification:
NPN SILICON RF TRANSISTOR Feature High gain S21e 2 TYP. Value is 10dB @ VCE=10V IC=20mA f=1GHz Low noise NF TYP. Value is 1.7dB @ VCE=10V IC=7mA f=1GHz fT (TYP.) TYP. Value is 6.5GHz @ VCE=10V IC=20mA f=1GHz PIN DEFINITION 1 Collector 3 Base 2 Emitter SOT-89 Absolute Maximum Ratings TA=25 Unless Otherwise noted PARAMETER SYMBLE MAXIMUM VALUE UNIT Collector-base breakdown voltage VCBO 20 V Collector-emitter breakdown voltage VCEO 12 V Emitter-base breakdown voltage VEBO 3 V Collector current IC 100 mA *Collector Power Dissipation *PD 1.2 W Junction Temperature Tj 150 Storage Temperature Tstg -65 +150 *With heat dissipation panel hFE Classification Classification A B C D E Marking RH RF RE hFE 60 100 90 140 130 180 170 250 250 300 1 of 3 ELECTRICAL CHARACTERISTICS (Ta=25 unle... See More ⇒
Keywords - ALL TRANSISTORS SPECS
2sc3357a 2sc3357b 2sc3357c 2sc3357d 2sc3357e.pdf Design, MOSFET, Power
2sc3357a 2sc3357b 2sc3357c 2sc3357d 2sc3357e.pdf RoHS Compliant, Service, Triacs, Semiconductor
2sc3357a 2sc3357b 2sc3357c 2sc3357d 2sc3357e.pdf Database, Innovation, IC, Electricity
