View 2sc3357a 2sc3357b 2sc3357c 2sc3357d 2sc3357e datasheet:

NPN SILICON RF TRANSISTOR Feature High gain:S21e2 TYP. Value is 10dB @ VCE=10VIC=20mAf=1GHz Low noise: NF TYP. Value is 1.7dB @ VCE=10VIC=7mAf=1GHz fT (TYP.) : TYP. Value is 6.5GHz @ VCE=10VIC=20mAf=1GHz PIN DEFINITION: 1 Collector 3Base 2 Emitter SOT-89 Absolute Maximum Ratings TA=25 Unless Otherwise noted PARAMETER SYMBLE MAXIMUM VALUE UNIT Collector-base breakdown voltage VCBO 20 V Collector-emitter breakdown voltage VCEO 12 V Emitter-base breakdown voltage VEBO 3 V Collector current IC 100 mA *Collector Power Dissipation *PD 1.2 W Junction Temperature Tj 150 Storage Temperature Tstg -65 ~ +150 *With heat dissipation panel hFE Classification Classification A B C D E Marking RH RF RE hFE 60~100 90~140 130~180 170~250 250~300 1 of 3 ELECTRICAL CHARACTERISTICS (Ta=25 unle

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