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View 2sc4226a 2sc4226b 2sc4226c 2sc4226d 2sc4226e detailed specification:

2SC4226 NPN SILICON RF TRANSISTOR External bipolar process, with high power gain process, with high power gain Low noise characteristics. The adoption of noise characteristics. The adoption of submit- niature SOT- 323 package, Especially suitable for Especially suitable for high density surface patch installation, mainly for installation, mainly for the VHF, UHF low noise amplifier. SOT-323 1 Base 2 2 Emitter 3 Collector Feature High gain S21e 2 TYP. Value is 11dB @ VCE=3V IC=7mA f=1GHz dB Low noise NF TYP. Value is 1.4 @ VCE=3V IC=7mA f=1GHz 4dB fT (TYP.) TYP. Value is 4.5 @ VCE=3V IC=7mA f=1GHz 4.5GHz Absolute Maximum Ratings TA=25 Unless Otherwise noted PARAMETER SYMBLE MAXIMUM VALUE UNIT UNIT Collector-base breakdown voltage VCBO 20 V Collector-emitter breakdown voltage VCEO 12 V Emitter-base breakd... See More ⇒

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 2sc4226a 2sc4226b 2sc4226c 2sc4226d 2sc4226e.pdf Design, MOSFET, Power

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